Invention Grant
- Patent Title: Semiconductor laser diode and method for manufacturing a semiconductor laser diode
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Application No.: US16500078Application Date: 2018-04-18
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Publication No.: US11196231B2Publication Date: 2021-12-07
- Inventor: Alfred Lell , Sebastian Taeger
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102017108435.5 20170420
- International Application: PCT/EP2018/059905 WO 20180418
- International Announcement: WO2018/192972 WO 20181025
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/028 ; H01S5/343

Abstract:
A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.
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