Invention Grant
- Patent Title: Resonant fin transistor (RFT)
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Application No.: US16833094Application Date: 2020-03-27
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Publication No.: US11201151B2Publication Date: 2021-12-14
- Inventor: Richard Hudeczek , Philipp Riess , Richard Geiger , Peter Baumgartner
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/423 ; H01L29/78 ; H01L29/06

Abstract:
Embodiments disclosed herein include resonators, such as resonant fin transistors (RFTs). In an embodiment a resonator comprises a substrate, a set of contact fins over the substrate, a first contact proximate to a first end of the set of contact fins, and a second contact proximate to a second end of the set of contact fins. In an embodiment, the resonator further comprises a set of skip fins over the substrate and adjacent to the set of contact fins. In an embodiment, the resonator further comprises a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.
Public/Granted literature
- US20210305245A1 RESONANT FIN TRANSISTOR (RFT) Public/Granted day:2021-09-30
Information query
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