Invention Grant
- Patent Title: Mask forming method
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Application No.: US16575674Application Date: 2019-09-19
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Publication No.: US11205571B2Publication Date: 2021-12-21
- Inventor: Hidetami Yaegashi , Soichiro Okada
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-175200 20180919
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/40 ; G03F7/039

Abstract:
There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.
Public/Granted literature
- US20200090927A1 MASK FORMING METHOD Public/Granted day:2020-03-19
Information query
IPC分类: