Invention Grant
- Patent Title: Semiconductor device and memory device
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Application No.: US16693974Application Date: 2019-11-25
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Publication No.: US11211461B2Publication Date: 2021-12-28
- Inventor: Shunpei Yamazaki , Daisuke Yamaguchi , Shinobu Kawaguchi , Yoshihiro Komatsu , Toshikazu Ohno , Yasumasa Yamane , Tomosato Kanagawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JPJP2018-248150 20181228,JPJP2019-011158 20190125
- Main IPC: H01L29/26
- IPC: H01L29/26 ; H01L27/108
Abstract:
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
Public/Granted literature
- US20200212185A1 Semiconductor Device and Memory Device Public/Granted day:2020-07-02
Information query
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