- 专利标题： Semiconductor device and memory device
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申请号： US16693974申请日： 2019-11-25
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公开(公告)号： US11211461B2公开(公告)日： 2021-12-28
- 发明人: Shunpei Yamazaki , Daisuke Yamaguchi , Shinobu Kawaguchi , Yoshihiro Komatsu , Toshikazu Ohno , Yasumasa Yamane , Tomosato Kanagawa
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Husch Blackwell LLP
- 优先权： JPJP2018-248150 20181228,JPJP2019-011158 20190125
- 主分类号： H01L29/26
- IPC分类号： H01L29/26 ; H01L27/108
摘要：
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
公开/授权文献
- US20200212185A1 Semiconductor Device and Memory Device 公开/授权日：2020-07-02
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