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公开(公告)号：US12051726B2
公开(公告)日：2024-07-30
申请号：US17550646
申请日：2021-12-14
发明人： Shunpei Yamazaki , Daisuke Yamaguchi , Shinobu Kawaguchi , Yoshihiro Komatsu , Toshikazu Ohno , Yasumasa Yamane , Tomosato Kanagawa
CPC分类号： H01L29/26 , H10B12/0335 , H10B12/05 , H10B12/31
摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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公开(公告)号：US11211461B2
公开(公告)日：2021-12-28
申请号：US16693974
申请日：2019-11-25
发明人： Shunpei Yamazaki , Daisuke Yamaguchi , Shinobu Kawaguchi , Yoshihiro Komatsu , Toshikazu Ohno , Yasumasa Yamane , Tomosato Kanagawa
IPC分类号： H01L29/26 , H01L27/108
摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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公开(公告)号：US11031506B2
公开(公告)日：2021-06-08
申请号：US16553287
申请日：2019-08-28
IPC分类号： H01L29/786 , H01L21/02 , H01L27/15 , H01L29/66
摘要： A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.
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