公开(公告)号：US11211461B2

公开(公告)日：2021-12-28

申请号：US16693974

申请日：2019-11-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Daisuke Yamaguchi ,  Shinobu Kawaguchi ,  Yoshihiro Komatsu ,  Toshikazu Ohno ,  Yasumasa Yamane ,  Tomosato Kanagawa

IPC分类号： H01L29/26 ,  H01L27/108

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US12051726B2

公开(公告)日：2024-07-30

申请号：US17550646

申请日：2021-12-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Daisuke Yamaguchi ,  Shinobu Kawaguchi ,  Yoshihiro Komatsu ,  Toshikazu Ohno ,  Yasumasa Yamane ,  Tomosato Kanagawa

IPC分类号： H01L29/26 ,  H10B12/00

CPC分类号： H01L29/26 ,  H10B12/0335 ,  H10B12/05 ,  H10B12/31

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US12062723B2

公开(公告)日：2024-08-13

申请号：US17272400

申请日：2019-08-29

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Masahiro Takahashi ,  Naoki Okuno ,  Tomosato Kanagawa ,  Shota Mizukami

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66969

摘要： A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.

公开(公告)号：US20220376113A1

公开(公告)日：2022-11-24

申请号：US17770588

申请日：2020-10-26

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Tomosato Kanagawa

IPC分类号： H01L29/786 ,  H01L29/417

摘要： A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.