- 专利标题： Method of manufacturing a semiconductor device
-
申请号： US17017666申请日： 2020-09-10
-
公开(公告)号： US11211471B1公开(公告)日： 2021-12-28
- 发明人: Fu-Shou Tsai , Yong-Yi Lin , Yang-Ju Lu , Yu-Lung Shih , Ji-Min Lin , Ching-Yang Chuang , Kun-Ju Li
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/423 ; H01L29/40
摘要：
The present invention discloses a metal gate process. A sacrificial nitride layer is introduced during the fabrication of metal gates. The gate height can be well controlled by introducing the sacrificial nitride layer. Further, the particle fall-on problem can be effectively solved.
信息查询
IPC分类:
