Invention Grant
- Patent Title: Spin-orbit torque magnetoresistance effect element and magnetic memory
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Application No.: US16645055Application Date: 2019-05-13
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Publication No.: US11211552B2Publication Date: 2021-12-28
- Inventor: Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2018-105392 20180531
- International Application: PCT/JP2019/018897 WO 20190513
- International Announcement: WO2019/230351 WO 20191205
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01F10/32 ; H01L27/22 ; H01L43/06 ; H01L43/10

Abstract:
This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction which is an orthogonal direction of the first ferromagnetic layer, the first ferromagnetic layer includes a first laminate structure and an interfacial magnetic layer in order from the spin-orbit torque wiring side, the first laminate structure is a structure obtained by arranging a ferromagnetic conductor layer and an oxide-containing layer in order from the spin-orbit torque wiring side, the ferromagnetic conductor layer includes a ferromagnetic metal element, and the oxide-containing layer includes an oxide of a ferromagnetic metal element.
Public/Granted literature
- US20210013398A1 SPIN-ORBIT TORQUE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2021-01-14
Information query
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