- Patent Title: Reactive read based on metrics to screen defect prone memory blocks
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Application No.: US16159132Application Date: 2018-10-12
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Publication No.: US11216349B2Publication Date: 2022-01-04
- Inventor: Harish Reddy Singidi , Vamsi Pavan Rayaprolu , Kishore Kumar Muchherla , Jianmin Huang , Xiangang Luo , Ashutosh Malshe
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F11/20
- IPC: G06F11/20 ; G06F3/06 ; G06F11/10

Abstract:
A variety of applications can include apparatus and/or methods to preemptively detect detect one memory blocks in a memory device and handle these memory blocks before they fail and trigger a data loss event. Metrics based on memory operations can be used to facilitate the examination of the memory blocks. One or more metrics associated with a memory operation on a block of memory can be tracked and a Z-score for each metric can be generated. In response to a comparison of a Z-score for a metric to a Z-score threshold for the metric, operations can be performed to control possible retirement of the memory block beginning with the comparison. Additional apparatus, systems, and methods are disclosed.
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