Invention Grant
- Patent Title: High-speed short-to-ground protection circuit for pass field-effect transistor (FET)
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Application No.: US16843324Application Date: 2020-04-08
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Publication No.: US11217992B2Publication Date: 2022-01-04
- Inventor: Kae Ann Wong , Siang Tong Tan , Luis Ariel Malave-Perez , Mikko Topi Loikkanen , Mitsuyori Saito , Angelo William Pereira
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Valerie M. Davis; Charles A. Brill; Frank D. Cimino
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H02H1/00

Abstract:
A system includes a power supply source and a power control circuit coupled to the power supply source, in which the power control circuit includes a pass field-effect transistor (FET). The system also includes a short-to-ground protection circuit coupled to an output of the pass FET. The short-to-ground protection circuit includes a sense circuit configured to detect when a magnitude and a change rate of a voltage drop at the output of the pass FET is greater than respective thresholds. The short-to-ground protection circuit also includes a control node at the output of the sense circuit. The sense circuit is configured to induce a control current at the control node in response to the magnitude and the change rate of a voltage drop at the output of the pass FET being greater than respective thresholds. The control current is used to turn off the pass FET.
Public/Granted literature
- US20210091562A1 HIGH-SPEED SHORT-TO-GROUND PROTECTION CIRCUIT FOR PASS FIELD-EFFECT TRANSISTOR (FET) Public/Granted day:2021-03-25
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