Invention Grant
- Patent Title: Formation method of semiconductor device structure with metal-semiconductor compound region
-
Application No.: US16034843Application Date: 2018-07-13
-
Publication No.: US11222818B2Publication Date: 2022-01-11
- Inventor: Yi-Hsiang Chao , Min-Hsiu Hung , Chun-Wen Nieh , Ya-Huei Li , Yu-Hsiang Liao , Li-Wei Chu , Kan-Ju Lin , Kuan-Yu Yeh , Chi-Hung Chuang , Chih-Wei Chang , Ching-Hwanq Su , Hung-Yi Huang , Ming-Hsing Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L29/45 ; H01L21/324 ; H01L29/66 ; H01L21/285 ; H01L21/265 ; H01L23/535

Abstract:
A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.
Public/Granted literature
- US20200020583A1 FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH METAL-SEMICONDUCTOR COMPOUND REGION Public/Granted day:2020-01-16
Information query
IPC分类: