Invention Grant
- Patent Title: High voltage isolation structure and method
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Application No.: US15857778Application Date: 2017-12-29
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Publication No.: US11222945B2Publication Date: 2022-01-11
- Inventor: Thomas Dyer Bonifield , Kannan Soundarapandian
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L29/06 ; H01L49/02 ; H01G4/012 ; H01G4/08 ; H01L21/283 ; H01L21/02 ; H01L21/762 ; H01L23/528 ; H01L23/522 ; H01L23/60 ; H01G4/30 ; H01L21/768 ; H01L23/532 ; H01L27/06 ; H01L23/00
Abstract:
Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.
Public/Granted literature
- US20190206981A1 HIGH VOLTAGE ISOLATION STRUCTURE AND METHOD Public/Granted day:2019-07-04
Information query
IPC分类:
