公开(公告)号：US20190206981A1

公开(公告)日：2019-07-04

申请号：US15857778

申请日：2017-12-29

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Kannan Soundarapandian

IPC: H01L49/02 ,  H01G4/30 ,  H01G4/012 ,  H01G4/08 ,  H01L29/06 ,  H01L21/283 ,  H01L21/02 ,  H01L21/762 ,  H01L23/528 ,  H01L23/522 ,  H01L23/60

CPC classification number: H01L28/60 ,  H01G4/012 ,  H01G4/08 ,  H01G4/30 ,  H01L21/02164 ,  H01L21/283 ,  H01L21/762 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/60 ,  H01L24/45 ,  H01L27/0629 ,  H01L29/0649

Abstract: Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.

公开(公告)号：US11222945B2

公开(公告)日：2022-01-11

申请号：US15857778

申请日：2017-12-29

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Kannan Soundarapandian

IPC: H01L21/60 ,  H01L29/06 ,  H01L49/02 ,  H01G4/012 ,  H01G4/08 ,  H01L21/283 ,  H01L21/02 ,  H01L21/762 ,  H01L23/528 ,  H01L23/522 ,  H01L23/60 ,  H01G4/30 ,  H01L21/768 ,  H01L23/532 ,  H01L27/06 ,  H01L23/00

Abstract: Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.