- Patent Title: Methods of doping fin structures of non-planar transistor devices
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Application No.: US15757251Application Date: 2015-09-25
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Publication No.: US11222947B2Publication Date: 2022-01-11
- Inventor: Cory E. Weber , Aaron D. Lilak , Szuya S. Liao , Aaron A. Budrevich
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- International Application: PCT/US2015/052306 WO 20150925
- International Announcement: WO2017/052612 WO 20170330
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/223 ; H01L21/225 ; H01L21/265 ; H01L21/266 ; H01L21/3115 ; H01L29/78 ; H01L29/775
Abstract:
Methods and structures formed thereby are described relating to the doping non-planar fin structures. An embodiment of a structure includes a substrate, wherein the substrate comprises silicon, a fin on the substrate comprising a first portion and a second portion; and a dopant species, wherein the first portion comprises a first dopant species concentration, and the second portion comprises a second dopant species concentration, wherein the first dopant species concentration is substantially less than the second dopant species concentration.
Public/Granted literature
- US20180254320A1 METHODS OF DOPING FIN STRUCTURES OF NON-PLANAR TRANSISTOR DEVICES Public/Granted day:2018-09-06
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