- 专利标题: EUV light source and apparatus for lithography
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申请号: US16405530申请日: 2019-05-07
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公开(公告)号: US11226564B2公开(公告)日: 2022-01-18
- 发明人: Jhan-Hong Yeh , Cheng-Chieh Chen , Jeng-Yann Tsay , Li-Jui Chen , Henry Yee Shian Tong , Wen-Chih Wang , Hsin-Liang Chen
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: McDermott Will & Emery LLP
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; H05G2/00
摘要:
In a method of diagnosing an RF generator of a laser produced plasma extreme ultra violet (LPP EUV) radiation source apparatus, a testing system is connected to the RF generator of the LPP EUV radiation source apparatus. An output power is measured by the testing system with changing an input power of the RF generator. Using a computer system, the measured output power is analyzed. Based on the analyzed measured output power, whether the RF generator is operating properly is determined.
公开/授权文献
- US20200004159A1 EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY 公开/授权日:2020-01-02
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