Invention Grant
- Patent Title: Sputtering apparatus and method of forming film
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Application No.: US15733976Application Date: 2019-07-23
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Publication No.: US11230760B2Publication Date: 2022-01-25
- Inventor: Yoshinori Fujii , Shinya Nakamura
- Applicant: ULVAC, INC.
- Applicant Address: JP Kanagawa
- Assignee: ULVAC, INC.
- Current Assignee: ULVAC, INC.
- Current Assignee Address: JP Kanagawa
- Agency: Cermak Nakajima & McGowan LLP
- Agent Tomoko Nakajima
- Priority: JPJP2018-158803 20180827
- International Application: PCT/JP2019/028777 WO 20190723
- International Announcement: WO2020/044872 WO 20200305
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/35

Abstract:
A sputtering apparatus SM has: a vacuum chamber in which a substrate and a target are disposed to lie opposite to each other; a plasma generating means generating a plasma inside the vacuum chamber; and a magnet unit disposed above the target. The magnet unit has a plurality of magnets with different polarities on a substrate side. A leakage magnetic field in which a line passing through a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof. The magnet unit is divided, on an imaginary line extending from the center of the target toward a periphery thereof, into a plurality of segments each having a plurality of magnets.
Public/Granted literature
- US20210214841A1 Sputtering Apparatus and Method of Forming Film Public/Granted day:2021-07-15
Information query
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