Invention Grant
- Patent Title: Polarization gate stack SRAM
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Application No.: US17061272Application Date: 2020-10-01
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Publication No.: US11232832B2Publication Date: 2022-01-25
- Inventor: Daniel H. Morris , Uygar E. Avci , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; G11C8/16 ; G11C11/419 ; H01L27/11 ; G11C11/22

Abstract:
One embodiment provides an apparatus. The apparatus includes a first inverter comprising a first pull up transistor and a first pull down transistor; a second inverter cross coupled to the first inverter, the second inverter comprising a second pull up transistor and a second pull down transistor; a first access transistor coupled to the first inverter; and a second access transistor coupled to the second inverter. A gate electrode of one transistor of each inverter comprises a polarization layer.
Public/Granted literature
- US20210020233A1 POLARIZATION GATE STACK SRAM Public/Granted day:2021-01-21
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