Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16492307Application Date: 2018-04-18
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Publication No.: US11233037B2Publication Date: 2022-01-25
- Inventor: Kenji Hayashi , Akihiro Suzaki , Masaaki Matsuo , Ryuta Watanabe , Makoto Ikenaga
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2017-083370 20170420,JPJP2018-078529 20180416
- International Application: PCT/JP2018/015987 WO 20180418
- International Announcement: WO2018/194090 WO 20181025
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/049 ; H01L23/29 ; H01L23/31 ; H01L23/373 ; H01L23/00

Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.
Public/Granted literature
- US20210134762A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-05-06
Information query
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