A transient voltage suppression device includes a substrate; a first conductivity type well region disposed in the substrate and comprising a first well and a second well; a third well disposed on the substrate, a bottom part of the third well extending to the substrate; a fourth well disposed in the first well; a first doped region disposed in the second well; a second doped region disposed in the third well; a third doped region disposed in the fourth well; a fourth doped region disposed in the fourth well; a fifth doped region extending from inside of the fourth well to the outside of the fourth well, a portion located outside the fourth well being located in the first well; a sixth doped region disposed in the first well; a seventh doped region disposed below the fifth doped region and in the first well.