Invention Grant
- Patent Title: Formation method of light sensing device
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Application No.: US16867997Application Date: 2020-05-06
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Publication No.: US11233082B2Publication Date: 2022-01-25
- Inventor: Yun-Wei Cheng , Yi-Hsing Chu , Yin-Chieh Huang , Chun-Hao Chou , Kuo-Cheng Lee , Hsun-Ying Huang , Hsin-Chi Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.
Public/Granted literature
- US20200266225A1 FORMATION METHOD OF LIGHT SENSING DEVICE Public/Granted day:2020-08-20
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