公开(公告)号：US10553631B2

公开(公告)日：2020-02-04

申请号：US16414563

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsing Chu ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Yin-Chieh Huang ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

公开(公告)号：US10535698B2

公开(公告)日：2020-01-14

申请号：US15907654

申请日：2018-02-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Yin-Chieh Huang

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.

公开(公告)号：US09608021B2

公开(公告)日：2017-03-28

申请号：US14080611

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng ,  Chun-Hao Chou ,  Yin-Chieh Huang ,  Wan-Chen Huang

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

公开(公告)号：US11626435B2

公开(公告)日：2023-04-11

申请号：US17019078

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Yin-Chieh Huang ,  Wan-Chen Huang ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.

公开(公告)号：US11177309B2

公开(公告)日：2021-11-16

申请号：US16741405

申请日：2020-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Yin-Chieh Huang

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.

公开(公告)号：US20190273104A1

公开(公告)日：2019-09-05

申请号：US16414563

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsing CHU ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Yin-Chieh Huang ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

公开(公告)号：US10304885B1

公开(公告)日：2019-05-28

申请号：US15964353

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsing Chu ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Yin-Chieh Huang ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

公开(公告)号：US09978790B2

公开(公告)日：2018-05-22

申请号：US14080555

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Yin-Chieh Huang ,  Wan-Chen Huang ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng

IPC: H01L27/142 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

公开(公告)号：US11031426B2

公开(公告)日：2021-06-08

申请号：US16687617

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a grid isolation structure, and a color filter. The substrate has a light-sensitive element therein. The grid isolation structure is above the substrate and includes a reflective layer, a first dielectric layer above the reflective layer, and a second dielectric layer above the first dielectric layer. The color filter is above the light-sensitive element and is surrounded by the grid isolation structure.

公开(公告)号：US10777592B2

公开(公告)日：2020-09-15

申请号：US15985351

申请日：2018-05-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Yin-Chieh Huang ,  Wan-Chen Huang ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a photosensitive unit, a first grid and a color filter. The photosensitive unit is located within the substrate. The first grid is located above the substrate, and the first grid has a first portion and a second portion above the first portion, wherein the second portion has a rounded top surface extending from a sidewall of the first portion of the first grid. The color filter is located above the photosensitive unit and in contact with the rounded top surface of the second portion of the first grid.