Invention Grant
- Patent Title: Active pattern structure and semiconductor device including the same
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Application No.: US16887900Application Date: 2020-05-29
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Publication No.: US11233151B2Publication Date: 2022-01-25
- Inventor: Sangmoon Lee , Kyungin Choi , Seunghun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0142901 20191108
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L31/119 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/417

Abstract:
An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.
Public/Granted literature
- US20210143271A1 ACTIVE PATTERN STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2021-05-13
Information query
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