Invention Grant
- Patent Title: Film forming method and heat treatment apparatus
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Application No.: US16815682Application Date: 2020-03-11
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Publication No.: US11239076B2Publication Date: 2022-02-01
- Inventor: Yutaka Motoyama , Hiroyuki Hayashi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2019-046357 20190313
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01L21/3065
Abstract:
A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.
Public/Granted literature
- US20200294800A1 FILM FORMING METHOD AND HEAT TREATMENT APPARATUS Public/Granted day:2020-09-17
Information query
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