Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16925006Application Date: 2020-07-09
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Publication No.: US11239187B2Publication Date: 2022-02-01
- Inventor: Tsutomu Kobori , Hiroshi Okabe , Shigeru Yoshida , Shingo Yanagihara , Yoshifumi Takahashi
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JPJP2019-129539 20190711
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L27/06 ; H01L23/66 ; H01L29/10 ; H01L29/737 ; H01L49/02

Abstract:
A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.
Public/Granted literature
- US20210013164A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-01-14
Information query
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