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公开(公告)号：US11239187B2
公开(公告)日：2022-02-01
申请号：US16925006
申请日：2020-07-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tsutomu Kobori , Hiroshi Okabe , Shigeru Yoshida , Shingo Yanagihara , Yoshifumi Takahashi
Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.
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公开(公告)号：US10128796B2
公开(公告)日：2018-11-13
申请号：US14977814
申请日：2015-12-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shinya Hitomi , Hidenori Obiya , Tsuyoshi Sato , Shingo Yanagihara
Abstract: A PA module (10) includes multiple amplifying elements (11a, 11b) and a variable filter circuit (12). The amplifying elements (11a, 11b) amplify a transmission signal in a frequency range including multiple communication bands and are cascade-connected to each other. The variable filter circuit (12) is connected between the amplifying elements (11a, 11b). The variable filter circuit (12) uses a transmission band corresponding to a used communication band selected from the multiple communication bands as a pass band and a reception band corresponding to the used communication band as an attenuation band.
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公开(公告)号：US12047043B2
公开(公告)日：2024-07-23
申请号：US17242815
申请日：2021-04-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tsutomu Kobori , Shingo Yanagihara , Yoshifumi Takahashi , Hiroshi Okabe
CPC classification number: H03F3/245 , H01L23/3128 , H03F3/195 , H03F2200/451
Abstract: A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.
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公开(公告)号：US20160112009A1
公开(公告)日：2016-04-21
申请号：US14977814
申请日：2015-12-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shinya Hitomi , Hidenori Obiya , Tsuyoshi Sato , Shingo Yanagihara
CPC classification number: H03F1/0205 , H03F1/565 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/111 , H03F2200/318 , H03F2200/411 , H03F2203/21139 , H03H7/38 , H04B1/04 , H04B1/525 , H04B2001/0416
Abstract: A PA module (10) includes multiple amplifying elements (11a, 11b) and a variable filter circuit (12). The amplifying elements (11a, 11b) amplify a transmission signal in a frequency range including multiple communication bands and are cascade-connected to each other. The variable filter circuit (12) is connected between the amplifying elements (11a, 11b). The variable filter circuit (12) uses a transmission band corresponding to a used communication band selected from the multiple communication bands as a pass band and a reception band corresponding to the used communication band as an attenuation band.
Abstract translation: PA模块（10）包括多个放大元件（11a，11b）和可变滤波器电路（12）。 放大元件（11a，11b）在包括多个通信频带的频率范围内放大发送信号，并且彼此级联。 可变滤波器电路（12）连接在放大元件（11a，11b）之间。 可变滤波器电路（12）使用与从多个通信频带中选择的使用的通信频带相对应的传输频带作为通带和与所使用的通信频带对应的接收频带作为衰减频带。
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公开(公告)号：US12119794B2
公开(公告)日：2024-10-15
申请号：US17470115
申请日：2021-09-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shingo Yanagihara
CPC classification number: H03F3/211 , H03F2200/09 , H03F2200/451
Abstract: A power amplifier circuit includes a first power amplifier, a balun, a second power amplifier, and a third power amplifier. The second and third power amplifiers each include unit bipolar transistors each including a first terminal electrically connected to a reference potential, a second terminal, and a third terminal that outputs an amplified signal; a common input terminal electrically connected to the second terminals of the transistors and receives an RF signal; a common bias terminal electrically connected to the second terminals of the transistors and receives a bias current; a common output terminal electrically connected to the third terminals of the transistors and outputs the amplified signal; and resistance elements each of which is electrically connected between the common input terminal and the second terminal of a corresponding one of the transistors and cuts a DC component of the bias current.
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Patent Agency Ranking
公开(公告)号：US11552601B2
公开(公告)日：2023-01-10
申请号：US17099297
申请日：2020-11-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shingo Yanagihara , Satoshi Tanaka
Abstract: A power amplifier circuit includes an input-stage power amplifier configured to receive a radio-frequency input signal, an output-stage power amplifier configured to output an amplified radio-frequency output signal, and an intermediate-stage power amplifier disposed between the input-stage power amplifier and the output-stage power amplifier. The intermediate-stage power amplifier includes a first transistor, a second transistor, and a capacitor having a first end connected to an emitter of the first transistor and a second end connected to a collector of the second transistor. The intermediate-stage power amplifier receives a signal at a base of the second transistor thereof and outputs an amplified signal from a collector of the first transistor thereof.
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公开(公告)号：US20180034423A1
公开(公告)日：2018-02-01
申请号：US15641631
申请日：2017-07-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shingo Yanagihara
CPC classification number: H03F1/565 , H03F3/195 , H03F3/213 , H03F3/245 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451
Abstract: A power amplifier module includes a first amplifier that amplifies an input signal to generate a first amplified signal and outputs the first amplified signal, a second amplifier that amplifies the first amplified signal to generate a second amplified signal and outputs the second amplified signal, and a matching network disposed between an output terminal of the first amplifier and an input terminal of the second amplifier. The first amplifier is provided on a first chip, and the second amplifier is provided on a second chip. The matching network has an impedance transformation characteristic adjustable in accordance with a control signal.
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公开(公告)号：US20150162890A1
公开(公告)日：2015-06-11
申请号：US14628564
申请日：2015-02-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Syunji Yoshimi , Kenji Saito , Shingo Yanagihara , Yuki Higashide
CPC classification number: H03H7/38 , H01P1/36 , H01P1/387 , H03H2007/386 , H04B1/0053
Abstract: Isolators are disposed such that DC magnetic fields of permanent magnets intensity with each other, and thus, the input impedance of non-reciprocal circuits 3a and 3b (regulating means 3) is reduced. Accordingly, the impedance conversion ratio between the output impedance of amplifying means 2 and the input impedance of the regulating means 3 is reduced to be relatively small. Thus, by simplifying the configuration of matching means 4 disposed between the amplifying means 2 and the regulating means 3, the insertion loss of the matching means 4 can be reduced, thereby enhancing the efficiency of a circuit module 1. Additionally, it is possible to dispose the non-reciprocal circuits 3a and 3b close to each other so that the DC magnetic fields of the permanent magnets can intensity with each other, thereby increasing the design flexibility of the circuit module 1 and accordingly reducing the size of the circuit module 1.
Abstract translation: 隔离器被布置成使得永磁体的DC磁场彼此强度，因此减小了不可逆电路3a和3b（调节装置3）的输入阻抗。 因此，放大装置2的输出阻抗与调节装置3的输入阻抗之间的阻抗转换比减小到相对较小。 因此，通过简化布置在放大装置2和调节装置3之间的匹配装置4的配置，可以减小匹配装置4的插入损耗，从而提高电路模块1的效率。另外， 将不可逆电路3a和3b彼此靠近，使得永磁体的DC磁场彼此强度相关，从而增加了电路模块1的设计灵活性，从而减小了电路模块1的尺寸。
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公开(公告)号：US11830839B2
公开(公告)日：2023-11-28
申请号：US16906686
申请日：2020-06-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shingo Yanagihara
IPC: H01L23/00
CPC classification number: H01L24/14 , H01L2224/14153 , H01L2924/13051 , H01L2924/30107
Abstract: A semiconductor device includes at least one transistor disposed on or in a substrate. The transistor is a bipolar transistor including an emitter, a base, and a collector, or a field-effect transistor including a source, a gate, and a drain. At least one first bump connected to the emitter or the source is disposed on the substrate. Furthermore, at least three second bumps connected to the collector or the drain are disposed on the substrate. In plan view, a geometric center of the at least one first bump is located inside a polygon whose vertices correspond to geometric centers of the at least three second bumps.
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公开(公告)号：US10594273B2
公开(公告)日：2020-03-17
申请号：US16110028
申请日：2018-08-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shingo Yanagihara
Abstract: A power amplifier module includes a first amplifier that amplifies an input signal to generate a first amplified signal and outputs the first amplified signal, a second amplifier that amplifies the first amplified signal to generate a second amplified signal and outputs the second amplified signal, and a matching network disposed between an output terminal of the first amplifier and an input terminal of the second amplifier. The first amplifier is provided on a first chip, and the second amplifier is provided on a second chip. The matching network has an impedance transformation characteristic adjustable in accordance with a control signal.
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