Invention Grant
- Patent Title: Self-biased bidirectional ESD protection circuit
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Application No.: US16199265Application Date: 2018-11-26
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Publication No.: US11239229B2Publication Date: 2022-02-01
- Inventor: Antonio Gallerano , Ann Margaret Concannon , Krishna Praveen Mysore Rajagopal
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06 ; H01L29/74 ; H01L29/747

Abstract:
Disclosed examples provide an ESD protection circuit including a protection structure to selectively conduct current between a first terminal at a protected node and a second terminal at a reference node in response to the protected node voltage and a control voltage signal rising above a trigger voltage during an ESD event, and a bias circuit configured to bias a protection structure control terminal at a control voltage corresponding to a higher one of a first voltage of the first terminal and a second voltage of the second terminal to control the trigger voltage of the ESD protection structure to keep the ESD protection structure off during normal operation.
Public/Granted literature
- US20190109127A1 SELF-BIASED BIDIRECTIONAL ESD PROTECTION CIRCUIT Public/Granted day:2019-04-11
Information query
IPC分类: