Invention Grant
- Patent Title: Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies
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Application No.: US16880900Application Date: 2020-05-21
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Publication No.: US11239242B2Publication Date: 2022-02-01
- Inventor: Guangjun Yang , Mohd Kamran Akhtar , Silvia Borsari , Alex J. Schrinsky
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
Some embodiments include a method of forming an integrated assembly. A construction is formed to include a conductive structure having a top surface, and a pair of sidewall surfaces extending downwardly from the top surface. Insulative material is over the top surface, and rails are along the sidewall surfaces. The rails include sacrificial material. The sacrificial material is removed to leave openings. Sealant material is formed to extend within the openings. The sealant material has a lower dielectric constant than the insulative material. Some embodiments include an integrated assembly having a conductive structure with a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface. Insulative material is over the top surface. Voids are along the sidewall surfaces and are capped by sealant material. The sealant material has a lower dielectric constant than the insulative material.
Public/Granted literature
Information query
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