Diode structure

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Patent Title: Diode structure
Application No.: US16584774

Application Date: 2019-09-26
Publication No.: US11239376B2

Publication Date: 2022-02-01
Inventor: Frederic Lanois
Applicant: STMICROELECTRONICS (TOURS) SAS
Applicant Address: FR Tours
Assignee: STMICROELECTRONICS (TOURS) SAS
Current Assignee: STMICROELECTRONICS (TOURS) SAS
Current Assignee Address: FR Tours
Agency: Seed IP Law Group LLP
Priority: FR1858933 20180928
Main IPC: H01L29/10
IPC: H01L29/10 ; H01L29/861 ; H01L29/417 ; H01L29/66 ; H01L29/78

Abstract:

The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10	...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的