Invention Grant
- Patent Title: Optoelectronic semiconductor chip, high-voltage semiconductor chip and method for producing an optoelectronic semiconductor chip
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Application No.: US16634165Application Date: 2018-07-16
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Publication No.: US11239392B2Publication Date: 2022-02-01
- Inventor: Fabian Kopp , Attila Molnar
- Applicant: OSRAM OLED GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Viering, Jentschura & Partners MBB
- Priority: DE102017117164.9 20170728
- International Application: PCT/EP2018/069296 WO 20180716
- International Announcement: WO2019/020424 WO 20190131
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/46 ; H01L33/14 ; H01L33/00 ; H01L33/62

Abstract:
An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.
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