公开(公告)号：US11239392B2

公开(公告)日：2022-02-01

申请号：US16634165

申请日：2018-07-16

申请人： OSRAM OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar

IPC分类号： H01L33/38 ,  H01L33/46 ,  H01L33/14 ,  H01L33/00 ,  H01L33/62

摘要： An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.

公开(公告)号：US20210328106A1

公开(公告)日：2021-10-21

申请号：US17258757

申请日：2019-07-11

申请人： Osram OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar ,  Franz Eberhard

IPC分类号： H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

摘要： An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.

公开(公告)号：US11276788B2

公开(公告)日：2022-03-15

申请号：US16635575

申请日：2018-07-20

申请人： Osram OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar

IPC分类号： H01L31/0224 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/38 ,  H01L33/46

摘要： An optoelectronic semiconductor chip may include a semiconductor layer sequence provided for generating and/or receiving radiation. The chip may further include a first trench structure and a second trench structure formed in the semiconductor layer sequence. A first contact finger structure may electrically conductively connect the second trench structure to a first semiconductor layer of the semiconductor layer sequence. The first contact finger structure may adjoin a first side surface and/or a second side surface of the second trench structure at least in places. A second contact finger structure may electrically conductively connect to a second semiconductor layer of the semiconductor layer sequence where the second contact finger may be arranged in the first trench structure.

公开(公告)号：US20210091269A1

公开(公告)日：2021-03-25

申请号：US16635187

申请日：2018-07-05

申请人： Osram OLED GmbH

发明人： Thomas Oszinda ,  Attila Molnar ,  Fabian Kopp

IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L33/46

摘要： Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.

公开(公告)号：US20220005974A1

公开(公告)日：2022-01-06

申请号：US17480920

申请日：2021-09-21

申请人： OSRAM OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62

摘要： In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

公开(公告)号：US20200220032A1

公开(公告)日：2020-07-09

申请号：US16635575

申请日：2018-07-20

申请人： Osram OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar

IPC分类号： H01L31/0224 ,  H01L33/38 ,  H01L31/0232 ,  H01L33/46 ,  H01L31/18

摘要： An optoelectronic semiconductor chip may include a semiconductor layer sequence provided for generating and/or receiving radiation. The chip may further include a first trench structure and a second trench structure formed in the semiconductor layer sequence. A first contact finger structure may electrically conductively connect the second trench structure to a first semiconductor layer of the semiconductor layer sequence. The first contact finger structure may adjoin a first side surface and/or a second side surface of the second trench structure at least in places. A second contact finger structure may electrically conductively connect to a second semiconductor layer of the semiconductor layer sequence where the second contact finger may be arranged in the first trench structure.

公开(公告)号：US10658548B2

公开(公告)日：2020-05-19

申请号：US16085934

申请日：2017-03-16

申请人： OSRAM OLED GMBH

发明人： Fabian Kopp ,  Attila Molnar

IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/42

摘要： A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.

公开(公告)号：US11631783B2

公开(公告)日：2023-04-18

申请号：US17480920

申请日：2021-09-21

申请人： OSRAM OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC分类号： H01L33/40 ,  H01L33/20 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/08

摘要： In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

公开(公告)号：US11322655B2

公开(公告)日：2022-05-03

申请号：US16635187

申请日：2018-07-05

申请人： Osram OLED GmbH

发明人： Thomas Oszinda ,  Attila Molnar ,  Fabian Kopp

IPC分类号： H01L33/32 ,  H01L33/62 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/22

摘要： Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.

公开(公告)号：US20210193875A1

公开(公告)日：2021-06-24

申请号：US16634165

申请日：2018-07-16

申请人： OSRAM OLED GmbH

发明人： Fabian Kopp ,  Attila Molnar

IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/62 ,  H01L33/14 ,  H01L33/46

摘要： An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.