Invention Grant
- Patent Title: Emitter oxidation uniformity within a wafer
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Application No.: US16244842Application Date: 2019-01-10
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Publication No.: US11239638B2Publication Date: 2022-02-01
- Inventor: Benjamin Kesler , Ajit Vijay Barve , Guowei Zhao
- Applicant: Lumentum Operations LLC
- Applicant Address: US CA Milpitas
- Assignee: Lumentum Operations LLC
- Current Assignee: Lumentum Operations LLC
- Current Assignee Address: US CA Milpitas
- Agency: Harrity & Harrity, LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/42 ; H01L21/02
Abstract:
A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.
Public/Granted literature
- US20200076166A1 EMITTER OXIDATION UNIFORMITY WITHIN A WAFER Public/Granted day:2020-03-05
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