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    Vertically offset vertical cavity surface emitting lasers
    1.
    发明授权
    Vertically offset vertical cavity surface emitting lasers 有权

    公开(公告)号：US12046876B2

    公开(公告)日：2024-07-23

    申请号：US17453060

    申请日：2021-11-01

    Applicant: Lumentum Operations LLC

    Inventor： Benjamin Kesler ,  Guowei Zhao

    IPC: H01S5/42 ,  H01S5/042 ,  H01S5/183 ,  H01S5/34

    CPC classification number: H01S5/426 ,  H01S5/0421 ,  H01S5/18305 ,  H01S5/18397 ,  H01S5/3416

    Abstract: A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.

    Optimizing a layout of an emitter array
    2.
    发明授权
    Optimizing a layout of an emitter array 有权

    公开(公告)号：US12283795B2

    公开(公告)日：2025-04-22

    申请号：US18061593

    申请日：2022-12-05

    Applicant: Lumentum Operations LLC

    Inventor： Ajit Vijay Barve ,  Benjamin Kesler ,  Matthew Glenn Peters

    IPC: H01S5/42 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20

    Abstract: A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

    Vertical-cavity surface-emitting laser with a tunnel junction
    6.
    发明授权
    Vertical-cavity surface-emitting laser with a tunnel junction 有权

    公开(公告)号：US11616343B2

    公开(公告)日：2023-03-28

    申请号：US16948763

    申请日：2020-09-30

    Applicant: Lumentum Operations LLC

    Inventor： Jun Yang ,  Guowei Zhao ,  Matthew Glenn Peters ,  Eric R. Hegblom ,  Ajit Vijay Barve ,  Benjamin Kesler

    IPC: H01S5/00 ,  H01S5/30 ,  H01S5/183 ,  H01S5/34 ,  H01S5/042

    Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

    Bi-directional vertical cavity surface emitting lasers
    7.
    发明授权
    Bi-directional vertical cavity surface emitting lasers 有权

    公开(公告)号：US12237648B2

    公开(公告)日：2025-02-25

    申请号：US18399844

    申请日：2023-12-29

    Applicant: Lumentum Operations LLC

    Inventor： Benjamin Kesler

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/42

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

    Integrated flood and spot illuminators
    8.
    发明授权
    Integrated flood and spot illuminators 有权

    公开(公告)号：US11804695B2

    公开(公告)日：2023-10-31

    申请号：US17247660

    申请日：2020-12-18

    Applicant: Lumentum Operations LLC

    Inventor： John Michael Miller ,  Lijun Zhu ,  Huanlin Zhu ,  Benjamin Kesler ,  Ajit Vijay Barve

    IPC: H01S5/183 ,  F21S8/00 ,  F21Y115/30

    CPC classification number: H01S5/18302 ,  F21S8/003 ,  F21Y2115/30

    Abstract: In some implementations, an emitter module may include an emitter layer including a first emitter array configured to produce a first beam that provides flood illumination, and a second emitter array configured to produce a second beam that provides spot illumination. The emitter module may include a first optics layer, positioned in front of the emitter layer, that includes a first collimating lens positioned in front of the first emitter array, and a second collimating lens positioned in front of the second emitter array. The emitter module may include a second optics layer, positioned in front of the first optics layer, that includes an optical diffuser positioned in front of the first collimating lens, and a beamsplitter grating positioned in front of the second collimating lens.

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