Invention Grant
- Patent Title: Conformal doped amorphous silicon as nucleation layer for metal deposition
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Application No.: US16754619Application Date: 2018-10-09
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Publication No.: US11244824B2Publication Date: 2022-02-08
- Inventor: Rui Cheng , Yihong Chen , Yong Wu , Abhijit Basu Mallick , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- International Application: PCT/US2018/054932 WO 20181009
- International Announcement: WO2019/074877 WO 20190418
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/285
Abstract:
Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.
Public/Granted literature
- US20200335334A1 Conformal Doped Amorphous Silicon As Nucleation Layer For Metal Deposition Public/Granted day:2020-10-22
Information query
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