Invention Grant
- Patent Title: Memory core chip having TSVs
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Application No.: US17164454Application Date: 2021-02-01
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Publication No.: US11244888B2Publication Date: 2022-02-08
- Inventor: Naohisa Nishioka , Seiji Narui
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; G11C29/44 ; G11C7/10 ; G11C5/06

Abstract:
Disclosed herein is an apparatus that includes a memory cell array, a plurality of TSVs penetrating a semiconductor chip, an output circuit configured to output a data to the TSVs, an input circuit configured to receive a data from the TSVs, a pad supplied with a data from outside, and a control circuit configured to write the data to the memory cell array, read the data from the memory cell array, and transfer the data from the memory cell array to the input circuit via the output circuit and the TSVs.
Public/Granted literature
- US20210183744A1 Memory Core Chip Having TSVS Public/Granted day:2021-06-17
Information query
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