Semiconductor device with first-in-first-out circuit

    公开(公告)号:US11805638B2

    公开(公告)日:2023-10-31

    申请号:US17202144

    申请日:2021-03-15

    摘要: Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

    Memory core chip having TSVs
    4.
    发明授权

    公开(公告)号:US11244888B2

    公开(公告)日:2022-02-08

    申请号:US17164454

    申请日:2021-02-01

    摘要: Disclosed herein is an apparatus that includes a memory cell array, a plurality of TSVs penetrating a semiconductor chip, an output circuit configured to output a data to the TSVs, an input circuit configured to receive a data from the TSVs, a pad supplied with a data from outside, and a control circuit configured to write the data to the memory cell array, read the data from the memory cell array, and transfer the data from the memory cell array to the input circuit via the output circuit and the TSVs.

    Memory Core Chip Having TSVS
    5.
    发明申请

    公开(公告)号:US20210183744A1

    公开(公告)日:2021-06-17

    申请号:US17164454

    申请日:2021-02-01

    摘要: Disclosed herein is an apparatus that includes a memory cell array, a plurality of TSVs penetrating a semiconductor chip, an output circuit configured to output a data to the TSVs, an input circuit configured to receive a data from the TSVs, a pad supplied with a data from outside, and a control circuit configured to write the data to the memory cell array, read the data from the memory cell array, and transfer the data from the memory cell array to the input circuit via the output circuit and the TSVs.

    Memory core chip having TSVS
    6.
    发明授权

    公开(公告)号:US10916489B1

    公开(公告)日:2021-02-09

    申请号:US16590760

    申请日:2019-10-02

    摘要: Disclosed herein is an apparatus that includes a memory cell army, a plurality of TSVs penetrating a semiconductor chip, an output circuit configured to output a data to the TSVs, an input circuit configured to receive a data from the TSVs, a pad supplied with a data from outside, and a control circuit configured to write the data to the memory cell array, read the data from the memory cell array, and transfer the data from the memory cell array to the input circuit via the output circuit and the TSVs.

    Semiconductor layered device with data bus inversion

    公开(公告)号:US10664432B2

    公开(公告)日:2020-05-26

    申请号:US15987895

    申请日:2018-05-23

    摘要: Apparatuses and methods of data transmission between semiconductor chips are described. An example apparatus includes: a data bus inversion (DBI) circuit that receives first, second and third input data in order, and further provides first, second and third output data, either with or without data bus inversion. The DBI circuit includes a first circuit that latches the first input data and the third input data; a second circuit that latches the second input data; a first DBI calculator circuit that performs first DBI calculation on the latched first input data and the latched second input data responsive to the first circuit latching the first input data and the second circuit latching the second input data, respectively; and a second DBI calculator circuit that performs second DBI calculation on the latched second data and the latched third input data responsive to the first circuit latching the third input data.

    System and method for write data bus control in a stacked memory device

    公开(公告)号:US10163469B2

    公开(公告)日:2018-12-25

    申请号:US15365563

    申请日:2016-11-30

    IPC分类号: G11C7/10 G11C19/28 G11C7/22

    摘要: Apparatuses and methods for transmitting data between a plurality of chips are described. An example apparatus includes: a first chip, wherein the first chip includes a receiver that receives a data strobe signal and further generates an internal strobe signal responsive, at least in part, to the data strobe signal, the internal strobe signal including a first edge and a second edge following the first edge; a buffer circuit coupled to a set of input terminals and captures first data at the set of input terminals responsive, at least in part, to the first edge of the internal strobe signal and further captures second data at the set of input terminals responsive, at least in part, to the second edge of the internal strobe signal; a driver coupled between the buffer circuit and a set of data terminals and configured to be activated to provide the first and second data from the buffer circuit to the set of data terminals responsive, at least in part, to a control signal; and a width expanding circuit that provides the control signal responsive, at least in part, to the internal strobe signal.

    Apparatuses and methods for semiconductor devices including clock signal lines

    公开(公告)号:US11264068B2

    公开(公告)日:2022-03-01

    申请号:US17122801

    申请日:2020-12-15

    摘要: Apparatuses for providing a clock signal for a semiconductor device are described. An example apparatus includes a chip including a first clock tree and a second clock tree. The first clock tree includes a first wiring segment extending in a first direction and a second wiring segment extending in a second direction perpendicular to the first direction and coupled the first wiring segment. The second clock tree includes a third wiring segment extending in the second direction, a fourth wiring segment extending in the first direction and coupled to the third wiring segment, and a fifth wiring segment extending in the second direction and coupled to the fourth wiring segment.

    Methods and apparatuses for aligning read data in a stacked semiconductor device

    公开(公告)号:US11004475B2

    公开(公告)日:2021-05-11

    申请号:US15938819

    申请日:2018-03-28

    发明人: Seiji Narui

    摘要: Methods and apparatuses are provided for aligning read data in a stacked semiconductor device. An example apparatus includes a stacked semiconductor device comprising stacked first and second die. The stacked semiconductor device includes a first path having a first align (first die) and second align (second die) circuits for providing read data from the second die and a second path having a first replica align (first die) and second replica align (second die) circuits. During a timing align operation, a first control circuit sets the first align and replica align circuits to a first delay value based on a propagation delay of a clock signal through the second replica align circuit. After setting of the first delay value, a second control circuit sets the second align and replica align circuits to a second delay value based on a difference in propagation delays through the first and second replica align circuits.