- 专利标题： Systems and methods for junction termination of wide band gap super-junction power devices
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申请号： US16517193申请日： 2019-07-19
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公开(公告)号： US11245003B2公开(公告)日： 2022-02-08
- 发明人: Stephen Daley Arthur , Victor Mario Torres , Michael J. Hartig , Reza Ghandi , David Alan Lilienfeld , Alexander Viktorovich Bolotnikov
- 申请人： General Electric Company
- 申请人地址： US NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Schenectady
- 代理机构： Fletcher Yoder, P.C.
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L31/0312 ; H01L29/06 ; H01L29/16 ; H01L21/04 ; H01L29/66
摘要：
A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device.
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