Invention Grant
- Patent Title: Semiconductor devices with core-shell structures
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Application No.: US16049358Application Date: 2018-07-30
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Publication No.: US11245033B2Publication Date: 2022-02-08
- Inventor: Carlos H. Diaz , Chun-Hsiung Lin , Huicheng Chang , Syun-Ming Jang , Chien-Hsun Wang , Mao-Lin Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/775 ; H01L29/778 ; H01L29/786 ; B82Y10/00 ; H01L21/02 ; H01L29/165 ; H01L29/51
Abstract:
In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.
Public/Granted literature
- US20180350984A1 SEMICONDUCTOR DEVICES WITH CORE-SHELL STRUCTURES Public/Granted day:2018-12-06
Information query
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