- 专利标题: Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment
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申请号: US17052562申请日: 2019-04-02
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公开(公告)号: US11248306B2公开(公告)日: 2022-02-15
- 发明人: Tsuyoshi Ohtsuki , Masaro Tamatsuka
- 申请人: SHIN-ETSU HANDOTAI CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人: SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JPJP2018-108344 20180606
- 国际申请: PCT/JP2019/014575 WO 20190402
- 国际公布: WO2019/235047 WO 20191212
- 主分类号: C25D11/02
- IPC分类号: C25D11/02 ; C25D17/12 ; C25D11/32 ; C25D11/00
摘要:
An anodic-oxidation equipment for forming a porous layer on a substrate to be treated, including: an electrolytic bath filled with an electrolytic solution; an anode and a cathode disposed in the electrolytic solution; and a power supply for applying current between the anode and the cathode in the electrolytic solution, wherein the anode is the substrate to be treated, and the cathode is a silicon substrate having a surface on which a nitride film is formed. This provides a cathode material in anodic-oxidation for forming porous silicon by an electrochemical reaction in an HF solution, the cathode material having a resistance to electrochemical reaction in an HF solution and no metallic contamination, etc., and furthermore, being less expensive than a conventional cathode material. Furthermore, high-quality porous silicon is provided at a lower cost than has been conventional.