Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US17071812Application Date: 2020-10-15
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Publication No.: US11251125B2Publication Date: 2022-02-15
- Inventor: Masanobu Hirose , Toshihiro Nakamura
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2016-063758 20160328
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/02 ; H01L23/50

Abstract:
Disclosed herein is a semiconductor integrated circuit device which can ensure sufficient power supply ability and ESD protection capability for an I/O cell without increasing the area of the semiconductor integrated circuit. In-row power supply interconnects provided in I/O cell rows are connected to a power supply interconnect provided between the I/O cell rows via power supply interconnects. The power supply interconnect is thicker than the in-row power supply interconnects.
Public/Granted literature
- US20210028110A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2021-01-28
Information query
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