Invention Grant
- Patent Title: High voltage demos transistor with improved threshold voltage matching
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Application No.: US16823638Application Date: 2020-03-19
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Publication No.: US11257907B2Publication Date: 2022-02-22
- Inventor: Doug Weiser
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/66 ; H01L21/265 ; H01L27/088 ; H01L21/8234 ; H01L21/225
Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type. First and second wells are located within the substrate, the first well being formed with a dopant of the first conductivity type, e.g. n-type, and the second well formed with a dopant of a second different conductivity type, e.g. p-type. A doped gap region is located between the first and second wells. The doped gap region is formed with a dopant of the second conductivity type, e.g. p-type, at a lower dopant concentration than the dopant concentration in the second well.
Public/Granted literature
- US20200219977A1 HIGH VOLTAGE DEMOS TRANSISTOR WITH IMPROVED THRESHOLD VOLTAGE MATCHING Public/Granted day:2020-07-09
Information query
IPC分类:
