Invention Grant
- Patent Title: Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
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Application No.: US16742248Application Date: 2020-01-14
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Publication No.: US11258358B2Publication Date: 2022-02-22
- Inventor: Vikas Rana , Shivam Kalla
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Schiphol
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Schiphol
- Agency: Crowe & Dunlevy
- Main IPC: H02M3/07
- IPC: H02M3/07

Abstract:
A charge pump circuit generates a charge pump output signal at a first node and is enabled by a control signal. A diode has an anode coupled to the first node and a cathode coupled to a second node. A current mirror arrangement sources a first current to the second node and sinks a second current from a third node. A comparator causes the control signal to direct the charge pump circuit to generate the charge pump output signal as having a voltage that ramps upwardly in magnitude (but negative in sign) if the voltage at the second node is greater than the voltage at the third node, and causes the control signal to direct the charge pump circuit to cease the ramping of the voltage of the charge pump output signal if the voltage at the second node is at least equal to the voltage at the third node.
Public/Granted literature
- US20200235660A1 CHARGE PUMP REGULATION CIRCUIT TO INCREASE PROGRAM AND ERASE EFFICIENCY IN NONVOLATILE MEMORY Public/Granted day:2020-07-23
Information query
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