Invention Grant
- Patent Title: Microelectronic devices including decoupling capacitors, and related apparatuses, electronic systems, and methods
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Application No.: US16876362Application Date: 2020-05-18
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Publication No.: US11264388B2Publication Date: 2022-03-01
- Inventor: Chao Wen Wang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L23/528 ; G11C5/10 ; H01L49/02 ; G11C5/02 ; H01L23/522

Abstract:
A microelectronic device comprises a die comprising a front side and a back side opposite the front side, one or more components of integrated circuitry within a base material of the die and between the front side and the back side of the die, and one or more decoupling capacitors within the back side of the die. The one or more decoupling capacitors comprise a first electrode, a second electrode, and a dielectric material between the first electrode and the second electrode. The microelectronic device further comprises a first conductive via comprising a conductive material extending through the base material, the first conductive via in electrical communication with the first electrode of the one or more decoupling capacitors and the front side of the microelectronic device. Related apparatuses including a decoupling capacitor in a back side, and related electronic systems and methods are also described.
Public/Granted literature
Information query
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