Invention Grant
- Patent Title: Semiconductor diodes employing back-side semiconductor or metal
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Application No.: US16082260Application Date: 2016-04-01
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Publication No.: US11264405B2Publication Date: 2022-03-01
- Inventor: Patrick Morrow , Rishabh Mehandru , Nathan D. Jack
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- International Application: PCT/US2016/025579 WO 20160401
- International Announcement: WO2017/171838 WO 20171005
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/08 ; H01L29/739 ; H01L29/06 ; H01L29/66 ; H01L29/165 ; H01L27/02 ; H01L29/861 ; H01L27/06 ; H01L49/02 ; H01L21/762 ; H01L21/84 ; H01L23/00 ; H01L29/786 ; H01L29/20 ; H01L29/205

Abstract:
Integrated circuit (IC) strata including one or more transistor and one or more semiconductor diode. A transistor may include one or more non-planar semiconductor bodies in which there is a channel region while the diode also includes one or more non-planar semiconductor bodies in which there is a p-type region, an n-type region, or both. One IC stratum may be only hundreds of nanometers in thickness and include both front-side and back-side interconnect levels. The front-side interconnect level is disposed over a front side of one or more of the non-planar semiconductor bodies and is coupled to at least one terminal of the transistor. The back-side interconnect level is disposed over a back side of one or more of the non-planar semiconductor bodies and is coupled to at least one terminal of the semiconductor diode.
Public/Granted literature
- US20190096917A1 SEMICONDUCTOR DIODES EMPLOYING BACK-SIDE SEIMCONDUCTOR OR METAL Public/Granted day:2019-03-28
Information query
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