- Patent Title: Methods of doping fin structures of non-planar transistor devices
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Application No.: US16412305Application Date: 2019-05-14
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Publication No.: US11264453B2Publication Date: 2022-03-01
- Inventor: Cory E. Weber , Aaron D. Lilak , Szuya S. Liao , Aaron A. Budrevich
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L21/223 ; H01L21/225 ; H01L21/265 ; H01L21/266 ; H01L21/3115 ; H01L29/78 ; H01L29/775
Abstract:
Methods and structures formed thereby are described relating to the doping non-planar fin structures. An embodiment of a structure includes a substrate, wherein the substrate comprises silicon, a fin on the substrate comprising a first portion and a second portion; and a dopant species, wherein the first portion comprises a first dopant species concentration, and the second portion comprises a second dopant species concentration, wherein the first dopant species concentration is substantially less than the second dopant species concentration.
Public/Granted literature
- US20190267448A1 METHODS OF DOPING FIN STRUCTURES OF NON-PLANAR TRANSISTOR DEVICES Public/Granted day:2019-08-29
Information query
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