Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16772031Application Date: 2019-01-15
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Publication No.: US11264468B2Publication Date: 2022-03-01
- Inventor: Guangyang Wang
- Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Wuxi New District
- Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Wuxi New District
- Agency: Polsinelli PC
- Priority: CN201810301083.6 20180404
- International Application: PCT/CN2019/071724 WO 20190115
- International Announcement: WO2019/192243 WO 20191010
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/06 ; H01L29/78 ; H01L23/522

Abstract:
A semiconductor device includes a semiconductor substrate, a field oxide layer, a gate region and field plate integrated structure and a plurality of contact holes. A body region and a drift region are formed in the semiconductor substrate. An active region is formed in the body region, and a drain region is formed in the drift region. A field oxide layer is located on the drift region and the drift region surrounds a part of the field oxide layer. An integrated structure including a gate region and a field plate, the integrated structure extending from above the field oxide layer to above the body region. A depth of a contact hole closer to the source region penetrating into the field oxide layer is greater than a depth of a contact hole closer to the drain region penetrating into the field oxide layer.
Information query
IPC分类: