Invention Grant
- Patent Title: Lateral bipolar junction transistor device and method of making such a device
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Application No.: US16803711Application Date: 2020-02-27
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Publication No.: US11264470B2Publication Date: 2022-03-01
- Inventor: Haiting Wang , Tamilmani Ethirajan , Zhenyu Hu , Tung-Hsing Lee
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/08 ; H01L29/73 ; H01L29/10 ; H01L29/423
Abstract:
One illustrative device disclosed herein includes a semiconductor substrate and a bipolar junction transistor (BJT) device that comprises a collector region, a base region and an emitter region. In this example, the device also includes a field effect transistor and at least one base conductive contact structure that conductively and physically contacts the base region.
Public/Granted literature
- US20210273061A1 LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUCH A DEVICE Public/Granted day:2021-09-02
Information query
IPC分类:
