- 专利标题: Flipped gate voltage reference and method of using
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申请号: US14182810申请日: 2014-02-18
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公开(公告)号: US11269368B2公开(公告)日: 2022-03-08
- 发明人: Mohammad Al-Shyoukh , Alex Kalnitsky
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: G05F3/26
- IPC分类号: G05F3/26 ; G05F3/24
摘要:
A voltage reference includes a flipped gate transistor configured to receive a first current. The voltage reference further includes a first transistor configured to receive a second current, the first transistor having a first leakage current, wherein the first transistor is connected with the flipped gate transistor in a Vgs subtractive arrangement. The voltage reference further includes an output node configured to output a reference voltage, the output node connected to the first transistor. The voltage reference further includes a second transistor connected to the output node, the second transistor having a second leakage current, wherein the first leakage current is substantially equal to the second leakage current.
公开/授权文献
- US20150234413A1 FLIPPED GATE VOLTAGE REFERENCE AND METHOD OF USING 公开/授权日:2015-08-20
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