Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17096127Application Date: 2020-11-12
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Publication No.: US11270775B2Publication Date: 2022-03-08
- Inventor: Takeshi Hioka
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-007572 20170119
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/30 ; G11C16/04 ; G11C16/24 ; G11C16/26

Abstract:
A semiconductor memory device includes first and second memory cell transistors between first and second select transistors, third and fourth memory cell transistors between third and fourth select transistors, a first word line for first and third memory cell transistors, a second word line for second and fourth memory cell transistors, first to fourth selection gate lines respectively for first through fourth select transistors, a bit line, and a source line. During a read operation, while a voltage applied to the second word line is boosted, voltages applied to the first word line and the third and fourth selection gate line are also boosted, after which the voltage applied to the first word line is lowered, and the third and fourth selection gate lines are discharged. After the time the third and fourth selection gate lines are discharged, voltages applied to the bit line and the source line are boosted.
Public/Granted literature
- US20210082526A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-03-18
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