Invention Grant
- Patent Title: Metallization layer formation process
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Application No.: US16515926Application Date: 2019-07-18
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Publication No.: US11270935B2Publication Date: 2022-03-08
- Inventor: Kangguo Cheng , Ruilong Xie , Chih-Chao Yang , Jing Guo
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768

Abstract:
A method of forming cut conductive lines is provided. The method includes forming a trough in a dielectric cover layer over a plurality of electrical contacts. The method further includes filling the trough with a planarization layer, and forming a plurality of vias in the planarization layer and the dielectric cover layer, wherein each of the plurality of vias is aligned with one of the plurality of electrical contacts. The method further includes removing the planarization layer, and forming a sacrificial via plug in each of the plurality of vias in the dielectric cover layer. The method further includes forming a fill layer in the trough, and forming a planarization layer opening through the fill layer, wherein the planarization layer opening is positioned between two adjacent sacrificial via plugs. The method further includes forming a separator in the planarization layer opening.
Public/Granted literature
- US20210020565A1 METALLIZATION LAYER FORMATION PROCESS Public/Granted day:2021-01-21
Information query
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