Invention Grant
- Patent Title: Package structure and fabricating method thereof
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Application No.: US16917920Application Date: 2020-07-01
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Publication No.: US11270956B2Publication Date: 2022-03-08
- Inventor: Kuan-Yu Huang , Sung-Hui Huang , Shang-Yun Hou
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L23/31 ; H01L23/498 ; H01L25/00 ; H01L21/56 ; H01L21/78 ; H01L23/48

Abstract:
A semiconductor device including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a warpage control pattern is provided. The first semiconductor die includes an active surface and a rear surface opposite to the active surface. The second semiconductor die is disposed on the active surface of the first semiconductor die. The insulating encapsulation is disposed on the active surface of the first semiconductor die and laterally encapsulates the second semiconductor die. The warpage control pattern is disposed on and partially covers the rear surface of the first semiconductor die.
Public/Granted literature
- US20210305173A1 PACKAGE STRUCTURE AND FABRICATING METHOD THEREOF Public/Granted day:2021-09-30
Information query
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